Head on this page.
Highly Reliable Panasonic SD Memory Cards
When data is repeatedly rewritten onto an SD Memory Card, the flash reliability lowers. Panasonic assures reliability by improving the performance of the controller, to provide high quality and a long life.
Data Writing and Rewriting Endurance
Maximising SD Memory Life
Static wear levelling controls written data, including fixed data. Various use cases eliminate intensive data writing and maximise the lifetime of the SD card.
Bit Error Auto Refresh
Withstanding Repeated Recording Operations
Automatically refreshes the bit errors that accumulate over time,
before they exceed the threshold. (Accumulated bit errors are
detected from read data.)
* This function does not guarantee permanent data retention.
Power Failure Robustness
Intelligent Data Writing
Dispersion of Writing Stress to NAND Flash Memory
Intelligent data writing disperses the writing stress to NAND flash memory, to reduce program disturbances.
Protects saved data and device
Unique Panasonic algorithms minimise data damage in the event of a power interruption. Even in the event that an error is generated, the controller recovers the data, restoring it to the condition prior to the error, and preventing errors from reaching the entire SD memory area.
High Compatibility That Only a Set Manufacturer Can Offer
During the development stage, compatibility with a wide range of SD application devices is carefully verified by Panasonic.
Panasonic SD memory features high endurance against static electricity, magnetism, and X-rays.
Operation is assured even under harsh temperature conditions.
A usable temperature range of -25 °C to 85 °C maintains stable performance everywhere, from extremely cold to intensely hot climates.
IEC61000-4-2 compliance: Clears Electrostatic Discharge Immunity Tests of 150-pF energy storage capacitance, 15-kV aerial discharge, and 330-Ω discharge resistance.
High endurance against bending and twisting.
Bending load resistance
20 N (Newton) min. (SD standard: 10 N)
Twisting torque resistance*
0.3 N•m (Newton meter) min. (SD standard: 0.15 N•m)
* For a full size SD card only.
Minimal damage from magnetic forces.
Operable after being set onto a 1,000-gauss DC magnetic field for approx. 1 minute.
Data is protected from X-rays.
ISO 7816-1 compliance: Operable after 0.1 Gy (gray) of X-ray irradiation.
JIS IPX7 compliance: Operable after submerging the product in water (tap water, 1-m depth) for 30 minutes.
* microSD only.
The internal card fuse protects against excess current and abnormal heating.
Even if excess current or abnormal heating were to occur due to internal card damage caused by the device being used or the environment, the built-in fuse will operate to prevent the SD Memory Card from overheating or igniting.
Reducing Costs While Maintaining High Quality
Application proposals such as integrating memories help to reduce the number of parts and shorten development lead time.
Compared with HDD and SSD Devices